specifications and information are subject to change without notice triquint semiconductor, inc ? phone 1-800-951-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 1 of 8 may 2009 ap562 3.3-3.8 ghz wimax 8w power amplifier product features ? 3.3 ? 3.8 ghz ? +39.4 dbm p1db ? 11.5 db gain ? 2.0% evm @ 30 dbm pout ? +12 v supply voltage ? lead-free/green/rohs-compliant 5x6 mm power dfn package applications ? wimax cpe/bts product description the ap562 is a high dynamic range broadband power amplifier in a surface mount package. the single-stage amplifier has 11.5 db gain, while being able to achieve high performance for 3.3?3.8 ghz wimax applications with up to 39.4 dbm of compressed 1db power. the ap562 uses a high reliab ility +12v ingap/gaas hbt process technology. the device incorporates proprietary bias circuitry to compensate for variations in linearity and current draw over temperature. the device does not require any negative bias voltage; an internal active bias allows the ap562 to operate directly off a commonly used +12v supply and has the added feature of a +5v power down control pin. rohs-compliant 5x6mm dfn package is surface mountable to allow fo r low manufacturing costs to the end user. the ap562 is targeted for use in a balanced or single ended configuration for wimax applications where high linearity and high power is required. functional diagram function pin no. rf in 4,5,6 rf out 9,10,11 i ref 14 v bias 1 nc 2,3,7,8,12,13 specifications parameter units min typ max operational bandwidth ghz 3.3 3.8 test frequency ghz 3.5 output channel power dbm +30 power gain db 11.5 input return loss db 15 output return loss db 6.7 error vector magnitude % 1.9 operating current, icc ma 685 rf switching speed ns 50 collector efficiency % 11.7 output p1db dbm 39.4 quiescent current, icq ma 400 vpd (4) v +5 vcc v +12 notes: 1. test conditions unless otherwise noted: t = 25oc, vpd = +5v, vcc = +12, icq = 400ma at pout = +30 dbm and f = 3.5 ghz. 2. using an 802.16-2004 ofdma, 64qam-1/2,1024-fft, 20 symbols, 30 subchannels signal, 9.5 db par @ 0.01%. 3. switching speed: 50% ttl to 100/0% rf. 4. vpd used for device power down. (low=rf off) 5. capable of handling 10:1 vswr @ 12 v dc , wimax signal, pout avg = 30dbm. absolute maximum rating parameter rating pin max (cw into 50 load) +33 dbm storage temperature -55 to +125 oc max junction temperature, t j,max 158 oc thermal resistance, jc 8.4 c / w operation of this device above any of th ese parameters may cause permanent damage. typical performance parameter units typical test frequency ghz 3.4 3.5 3.6 channel power dbm +30 +30 +30 power gain db 11.5 11.5 11.3 input return loss db 11 15 15 output return loss db 5.6 6.7 5.9 error vector magnitude % 2.2 1.9 1.7 operating current, icc ma 720 685 670 collector efficiency % 11.1 11.7 12.2 output p1db dbm 39.5 39.4 38.7 quiescent current, icq ma 400 vpd v +5 vcc v +12 ordering information part no. description ap562-f wimax 12v 8w hbt amplifier AP562-PCB3500 3.4-3.6 ghz fully assembled evaluation board standard t/r size = 500 pieces on a 7? reel.
specifications and information are subject to change without notice triquint semiconductor, inc ? phone 1-800-951-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 2 of 8 may 2009 ap562 3.3-3.8 ghz wimax 8w power amplifier application circuit pc board layout v pd gnd v cc circuit board material: 0.0147? rogers ultralam 2000, single layer, 1 oz copper, r = 2.45, microstrip line details: width = .042?, spacing = .050? baseplate configuration notes: 1. please note that for reliable opera tion, the evaluation board will have to be mounted to a much larger heat sink during opera tion and in laboratory environm ents to dissipate the power consumed by the device. the use of a conve ction fan is also recommended in laboratory environments. 2. the area around the module underneath the pcb shoul d not contain any soldermask in order to maintain good rf grounding. 3. for proper and safe operation in the labor atory, the power-on sequencing is recommended. evaluation board bias procedure following bias procedure is recommended to ensure proper functiona lity of ap562 in a laboratory environment. the sequencing is not required in the final system application. bias. voltage (v) vcc +12 vpd +5 turn-on sequence: 1. attach input and output load s onto the evaluation board. 2. turn on power supply vcc = +12v. 3. turn on power supply vpd = +5v. 4. turn on rf power. turn-off sequence: 1. turn off rf power. 2. turn off power supply vpd = +5v. 3. turn off power supply vcc = +12v.
specifications and information are subject to change without notice triquint semiconductor, inc ? phone 1-800-951-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 3 of 8 may 2009 ap562 3.3-3.8 ghz wimax 8w power amplifier typical device data s-parameters (v cc = +12 v, i cc = 400 ma, 25 c, unmatched 50 ohm system) 0246 frequency (ghz) gain / maximum stable gain -20 -10 0 10 20 30 40 gain (db) db(gmax()) ap562 db(|s(2,1)|) ap562 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s11 swp max 6ghz swp min 0.05ghz s(1,1) ap562 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s22 swp max 6ghz swp min 0.05ghz s(2,2) ap562 notes: the gain for the unmatched device in 50 ohm system is shown as th e trace in black color. for a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain . the maximum stable gain is shown in the red line. s-parameters (v cc = +12 v, i cq = 400 ma, 25 c, unmatched 50 ohm system, calibrated to device leads) freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 -0.79 -175.42 27.05 124.23 -41.01 40.51 -1.10 -104.38 100 -0.40 -177.67 22.28 107.37 -41.94 16.01 -1.53 -137.35 300 -0.31 179.53 14.07 90.92 -41.94 2.09 -1.68 -163.78 500 -0.29 177.89 9.72 82.63 -41.62 0.94 -1.77 -171.20 700 -0.29 175.84 6.87 75.39 -41.31 8.79 -1.81 -175.14 900 -0.34 173.80 4.76 69.22 -41.51 0.79 -1.71 -177.04 1100 -0.36 171.63 3.14 62.91 -41.31 -1.63 -1.63 -178.74 1300 -0.37 168.83 1.85 56.68 -41.31 -5.01 -1.60 179.84 1500 -0.35 165.93 0.86 50.02 -41.31 -8.04 -1.57 178.03 1700 -0.47 161.85 0.96 41.71 -40.35 -13.12 -1.66 174.97 1900 -0.50 158.09 0.45 34.33 -40.35 -18.22 -1.61 172.45 2100 -0.60 154.55 0.05 26.46 -40.18 -24.14 -1.51 170.10 2300 -0.69 150.84 -0.24 17.89 -40.09 -31.86 -1.38 167.43 2500 -0.82 147.61 -0.40 9.26 -39.83 -40.50 -1.28 164.93 2700 -0.94 144.72 -0.44 -0.25 -39.58 -51.10 -1.17 162.74 2900 -1.16 142.23 -0.27 -11.07 -39.33 -65.09 -1.02 160.45 3100 -1.51 140.70 -0.02 -23.54 -38.79 -81.01 -0.81 158.40 3300 -2.02 140.58 0.25 -38.88 -38.06 -102.23 -0.59 156.27 3500 -2.49 142.81 0.36 -58.18 -37.59 -129.91 -0.33 153.91 3700 -2.56 147.66 -0.16 -80.37 -37.20 -160.59 -0.23 150.78 3900 -2.06 151.40 -1.53 -102.11 -37.33 169.42 -0.28 148.13 4100 -1.43 151.78 -3.50 -120.64 -37.79 144.14 -0.40 146.26 4300 -1.01 150.24 -5.66 -135.37 -38.27 122.49 -0.53 145.38 4500 -0.76 148.06 -7.78 -147.04 -38.56 107.83 -0.64 144.44 device s-parameters are available for download off of the website at: http://www.tqs.com
specifications and information are subject to change without notice triquint semiconductor, inc ? phone 1-800-951-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 4 of 8 may 2009 ap562 3.3-3.8 ghz wimax 8w power amplifier 3.4-3.6 ghz application circuit (AP562-PCB3500) typical o-fdma performance at 25 c frequency (ghz) 3.4 3.5 3.6 units channel power +30 +30 +30 dbm power gain 11.5 11.5 11.3 db input return loss 11 15 15 db output return loss 5.6 6.7 5.9 db evm 2.2 1.9 1.7 % operating current, icc 720 685 670 ma collector efficien cy 11.1 11.7 12.2 % output p1db 39.5 39.4 38.7 dbm quiescent current, icq 400 ma vpd +5 v vcc +12 v c6 c7 c10 c13 c16 c1 c8 c17 c14 c11 c15 c18 c20 c12 r2 c21 r1 l3 c22 l3 c24 c23 c25 r3 d2 d1 notes: the primary rf microstrip line is 50 . components shown on the silkscreen but not on the schematic are not used. 1. the edge of c23 is placed at 43mil from ap562 rfout pin. 2. the edge of c24 is placed right next to c23. 3. the edge of c22 is placed at 95mil from ap562 rfin pin. 4. the edge of l3 is placed right next to c22. 3.4-3.6 ghz application circuit performance plots 802.16-2004 o-fdma, 64qam-1/2, 1024-fft, 20 symbols and 30 subchannels. 9.5 db par @ 0.01%, 5 mhz carrier bw gain vs. frequency t=25c 7 8 9 10 11 12 3 3.2 3.4 3.6 3.8 4 frequency (ghz) gain (db) return loss t=25c -25 -20 -15 -10 -5 0 3 3.2 3.4 3.6 3.8 4 frequency (ghz) s11, s22 (db) s11 s22 current vs output average power vs. frequency t=25c 400 450 500 550 600 650 700 750 800 20 22 24 26 28 30 32 output power (dbm) collector current (ma) 3.4 ghz 3.5 ghz 3.6 ghz efficiency vs output average power vs. frequency t=25c 0 5 10 15 20 20 22 24 26 28 30 32 output power (dbm) collector efficiency (%) 3.4 ghz 3.5 ghz 3.6 ghz evm vs. output average power vs. frequency t=25c 0 1 2 3 4 5 20 22 24 26 28 30 32 output power (dbm) evm (%) 3.4 ghz 3.5 ghz 3.6 ghz power gain vs temperature pout = 30 dbm 10 11 12 13 -50-30-101030507090 temperature (c ) gain (db) 3.4 ghz 3.5 ghz 3.6 ghz
specifications and information are subject to change without notice triquint semiconductor, inc ? phone 1-800-951-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 5 of 8 may 2009 ap562 3.3-3.8 ghz wimax 8w power amplifier current vs output average power vs temperature f=3.5 ghz 400 450 500 550 600 650 700 750 800 20 22 24 26 28 30 32 output power (dbm) icc (ma) +25oc -40oc +85oc efficiency vs output average power vs temperature f=3.5 ghz 0 5 10 15 20 25 20 22 24 26 28 30 32 output power (dbm) efficiency (%) +25oc -40oc +85oc evm vs. output average power vs temperature f=3.5 ghz 0 1 2 3 4 5 20 22 24 26 28 30 32 output power (dbm) evm (%) +25oc -40oc +85oc
specifications and information are subject to change without notice triquint semiconductor, inc ? phone 1-800-951-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 6 of 8 may 2009 ap562 3.3-3.8 ghz wimax 8w power amplifier 3.4 ? 3.6 ghz application note: ch anging icq biasing configurations the ap562 can be configured to operate with lower bias current by varying the bias-adjust resistor r2. (table 1) the recommended circuit configurations shown previously in this datasheet have the device operating with a 400 ma as the quiescent current (i cq ). this biasing level represents a tradeoff in terms of evm and efficiency. lowering i cq will improve upon the efficiency of the devi ce, but degrade the evm performance. measured data shown in the plots below represents the ap562 measured and configured for 3.5 ghz applications. it is expected that variation of the bias current for other frequency applications will produce similar performance results. table 1 : reduced current operation icq (ma) r2 ( ? ) v pd (v) i ref (v) 400 270 5 2.92 350 275 5 2.88 300 320 5 2.83 250 380 5 2.8 200 473 5 2.73 150 616 5 2.66 100 857 5 2.6 evm vs. output average power vs. icq f=3.5 ghz 0 1 2 3 4 28 29 30 31 32 pout (dbm) evm (%) 100ma 150ma 200ma 250ma 300ma 350ma 400ma efficiency vs. output average power vs icq f=3.5 ghz 8 12 16 20 24 28 29 30 31 32 pout (dbm) efficiency (%) 100ma 150ma 200ma 250ma 300ma 350ma 400ma
specifications and information are subject to change without notice triquint semiconductor, inc ? phone 1-800-951-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 7 of 8 may 2009 ap562 3.3-3.8 ghz wimax 8w power amplifier parameter measurement information switching speed test test conditions: vcc = +12v at 25 o c output power = +30dbm @ 2.5 ghz rep rate = 1 khz, 50% duty cycle vpd amplitude = +5v r2=200 ohms, c9=12pf (c10, c11 removed for best switching performance) xtal detector voltage =15mv (square law) test result waveforms: cw signal source pulse generator oscilloscope diode detector ap56x evaluation brd attenuator cable length = lx cable length = lx +ve - ve cable length = lx vpd vpd = +5v vpd = +0v rf on vpd = +5v delay = 50ns rf on vpd = +5v delay = 50ns rf off
specifications and information are subject to change without notice triquint semiconductor, inc ? phone 1-800-951-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 8 of 8 may 2009 ap562 3.3-3.8 ghz wimax 8w power amplifier mechanical information this package is lead-free/green/rohs-compliant. the plating materi al on the pins is annealed matte tin over copper. it is co mpatible with both lead-free (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. drawing outline drawing mounting configuration / land pattern product marking the component will be laser marked with a ?ap562-f? product label wi th an alphanumeric lot code on the top surface of the package. tape and reel specifications for this part will be located on the website in the ?application notes? section. functional pin layout pin function 1 vbias 2, 3, 7, 8, 12, 13 n/c 4, 5, 6 rf in 9, 10, 11 rf output / vcc 14 iref backside paddle gnd msl / esd rating esd rating: class 1a value: passes 250v to <500v test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iv value: passes 1000v to <2000v test: charged device model (cdm) standard: jedec standard jesd22-c101 msl rating: level 3 at +260 c convection reflow standard: jedec standard j-std-020
|
